Description
These transistors are well-suited to high-power switching applications such as:
- Welding equipment
- Frequency inverters and converters
- UPS (Uninterruptible Power Supply)
- Industrial motor controllers and drives
Specifications
Parameter Value (approx.)
- Type N-channel IGBT
- Package TO-3P / TO-3PN
- V_CE (Max) 600–650 V
- I_C (Continuous) ~40 A (possibly up to 80 A)
- Power Dissipation ~280 W (TC = 25 °C)
- Saturation Voltage ~1.9 V (at 40 A, V_GE = 15 V)
- Gate-Emitter Voltage ±20 V (pulse up to ±30 V)
- Junction Temp Range –40 °C to +150 °C






Reviews
There are no reviews yet.