Description
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.
FEATURES
- RDS(ON) = 23mΩ@VGS = 10 V
- Ultra low gate charge ( typical 30 nC )
- Low reverse transfer Capacitance ( CRSS = typical 80 pF )
- Fast switching capability
- 100% avalanche energy specified
- Improved dv/dt capability
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