P-Channel MOSFET FQP27P06 COM24, R21

Fr1,000

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

In stock

SKU: CPN930 Category:

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
  •  -27A, -60V, RDS(on)= 0.07Ω@VGS= -10 V
  • Low gate charge ( typical 33 n C)
  • Low Crss ( typical 120 pF)
  •  Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating
Package includes:
1×P-Channel MOSFET FQP27P06

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