Description
D1555 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process.
Specification
Type Designator: TOSHIBA D1555
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 165 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Applications
1. Horizontal deflection output for color TV.
Datasheet
