Description
The CRG60T60AK3HD is a high-performance IGBT power device designed for demanding power-conversion and switching applications. It combines a low-loss trench-gate IGBT structure with an integrated fast recovery diode to deliver high efficiency, low saturation voltage and reliable operation at currents up to 60 A and voltages up to 600 V.
Packaged in a robust TO-247 through-hole plastic case, the device offers excellent thermal conductivity and ease of mounting for industrial equipment.
Typical uses include inverter welding machines, motor drives, UPS systems, solar inverters, and other high-frequency power supplies. Its fast switching capability, wide operating temperature range and high surge-current tolerance make it an ideal choice for engineers who require compact, cost-effective and durable power semiconductor solutions.
RoHS-compliant and available in bulk or tube packaging, the CRG60T60AK3HD helps manufacturers achieve higher efficiency, longer service life and lower overall system cost in power electronics designs.
Key Specifications
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Type: Field Stop IGBT power transistor with integrated fast recovery diode.
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Package: TO-247-3 through-hole plastic package.
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Collector-Emitter Voltage (V<sub>CES</sub>): 600 V (capable of blocking up to ~600 V).
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Collector Current (I<sub>C</sub>):
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120 A at 25 °C (peak capability)
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60 A continuous at 100 °C rated operating current.
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Power Dissipation (P<sub>D</sub>): ~483 W (at 25 °C case).
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Saturation Voltage V<sub>CE(on)</sub>: ~1.85 V typical at 60 A.
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Gate Charge: ~117 nC @ 15 V.
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Switching Characteristics:
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Turn-on delay ~66 ns
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Turn-off delay ~152 ns
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Diode reverse recovery ~57 ns
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Operating Temperature: Typically from –55 °C up to ~150 °C (case).
